Description
The Optitherm III infrared thermometer temperature measurement system uses fiber optics and the latest pulsed laser infrared technology to measure precisely a single or multi-wafer temperature during in-situ epitaxial growth in CVD, MBE, MOCVD or sputtering applications. While all passive infrared thermometer instruments measure a target radiance temperature, the Optitherm determines dynamically the emissivity value of a specular target resulting in unmatched wafer temperature measurement accuracy to ±3°C for temperature control.
The Optitherm incorporates an active reflectometer technique to determine the target emissivity (E%) and true temperature (Te). This is accomplished by automatically measuring the target specular reflectivity at the same time, location and wavelength as the infrared radiation temperature measurement to determine the true wafer temperature. The microprocessor collects these values at an extremely fast 1ms data acquisition rate and transmits data to host PC for temperature calculation, data logging and immediate process temperature control.
The Optitherm infrared technology can be implemented into a variety of in-situ semiconductor applications including production tools, wafer processing, research and development anywhere accurate temperature measurements are critical. Other process fabrication applications for the Optitherm® include wafer rotation and speed, wafer alignment (out of position) and process fault operating conditions.
Product Features
Non Contact Infrared Thermometer
Automatically Measures Temperature & Emissivity
Temperature Range: 250°C – 1500°C
Temperature Accuracy: ±3°C
6 Spectral Wavelengths Available: 808, 850, 905, 940,
980, and 1550nm
Data Acquisition Rate to 1ms
Digital RS232 PC Interface
Output 70 Readings Per Second to Host PC
Target Spot Sizes From 0.25” and Larger
Fiber Optic Sensor Temperature Measurement
Other Process Applications include Wafer Rotation
Speed and Process Operating Fault Conditions
Product Applications
• Improve economics and quality control of wafer fabrication and manufacturing
• Production, Research & Development of Wafers
• Monitor growth rate and layer thickness
• Temperature measurement of epitaxial growth in:
CVD Reactors
MBE Reactors
MOCVD Reactors
• Specular Targets and Substrates
• Process Fault Conditions including wafer rotation, speed, alignment and positioningADVANTAGES
• Measures Rapidly Changing Emissivity During Layer Growth Providing Accurate Temperature Determination
• Waveband Selection Based on Target Material Properties
• Emissivity Channel Can Be Field Calibrated
• Rapid Response TimeCOMPATIBLE SUBSTRATES
• Silicon • Silicon Carbide • Silicon Nitride • Indium Arsenide • Gallium Arsenide • Gallium Nitride
• Indium Phosphide • Germanium • Highly Polished Metals
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